power transistors 1 publication date: february 2003 sjd00035aed 2sb0968 (2SB968) silicon pnp epitaxial planar type for low-frequency output amplification complementary to 2sd1295 features ? possible to solder radiation fin directly to printed circuit board ? high collector-emitter voltage (base open) v ceo ? large collector power dissipation p c absolute maximum ratings t a = 25 c parameter symbol rating unit collector-base voltage (emitter open) v cbo ? 50 v collector-emitter voltage (base open) v ceo ? 40 v emitter-base voltage (collector open) v ebo ? 5v collector current i c ? 1.5 a peak collector current i cp ? 3a collector power dissipation (t c = 25 c) p c 10 w junction temperature t j 150 c storage temperature t stg ? 55 to + 150 c parameter symbol conditions min typ max unit collector-base voltage (emitter open) v cbo i c = ? 1 ma, i e = 0 ? 50 v collector-emitter voltage (base open) v ceo i c = ? 2 ma, i b = 0 ? 40 v collector-base cutoff current (emitter open) i cbo v cb = ? 20 v, i e = 0 ? 1 a collector-emitter cutoff current (base open) i ceo v ce = ? 10 v, i b = 0 ? 100 a emitter-base cutoff current (collector open) i ebo v eb = ? 5 v, i c = 0 ? 10 a forward current transfer ratio h fe1 * v ce = ? 5 v, i c = ? 1 a 80 220 ? h fe2 v ce = ? 5 v, i c = ? 1 ma 10 collector-emitter saturation voltage v ce(sat) i c = ? 1.5 a, i b = ? 0.15 a ? 1v base-emitter saturation voltage v be(sat) i c = ? 2 a, i b = ? 0.2 a ? 1.5 v transition frequency f t v ce = ? 5 v, i c = ? 0.5 a, f = 200 mhz 150 mhz collector output capacitance c ob v cb = ? 20 v, i e = 0, f = 1 mhz 45 pf (common base, input open circuited) electrical characteristics t a = 25 c 3 c 6.5 0.1 2.3 0.1 (5.3) (4.35) (3.0) (1.8) (5.5) 0.75 0.1 2.3 0.1 4.6 0.1 1 123 3 2 0.5 0.1 1.0 0.1 0.1 0.05 0.5 0.1 0.8 max. 1.0 0.2 7.3 0.1 1.8 0.1 2.5 0.1 5.3 0.1 4.35 0.1 unit: mm 1: base 2: collector 3: emitter eiaj: sc-63 u-g1 package note) 1. measuring methods are based on japanese industrial standard jis c 7030 measuring methods for transistors. 2. * : rank classification rank q r h fe1 80 to 160 120 to 220 note) self-supported type package is also prepared. note) the part number in the parenthesis shows conventional part number.
2sb0968 2 sjd00035aed v be(sat) ? i c h fe ? i c f t ? i e p c ? t a i c ? v ce v ce(sat) ? i c c ob ? v cb v cer ? r be i ceo ? t a 0 0 160 40 120 80 4 12 8 16 t c =ta collector power dissipation p c (w) ambient temperature t a ( c) 0 ? 10 ? 2 ? 4 ? 8 ? 6 0 ? 4.0 ? 3.5 ? 3.0 ? 2.5 ? 2.0 ? 1.5 ? 1.0 ? 0.5 t c =25?c i b =?0ma ?ma ?0ma ?5ma ?0ma ?5ma ?0ma ?5ma collector current i c (a) collector-emitter voltage v ce (v) ? 0.01 ? 0.01 ? 0.1 ? 1 ? 10 ? 0.1 ? 1 collector-emitter saturation voltage v ce(sat) (v) collector current i c (a) i c /i b =10 t c =100?c 25?c ?5?c ? 0.01 ? 0.01 ? 1 ? 0.1 ? 0.1 ? 1 ? 10 i c /i b =10 t c =?5?c 25?c 100?c base-emitter saturation voltage v be(sat) (v) collector current i c (a) ? 0.01 ? 1 ? 0.1 1 10 100 1 000 v ce =?v t c =100?c 25?c ?5?c forward current transfer ratio h fe collector current i c (a) 10 0 240 200 160 120 80 40 transition frequency f t (mhz) emitter current i e (ma) 10 2 10 3 10 4 v cb =?5v f=200mhz t c =25?c ? 1 ? 10 ? 100 0 20 40 60 80 100 120 140 collector output capacitance (common base, input open circuited) c ob (pf) collector-base voltage v cb (v) i e =0 f=1mhz t c =25?c 0 ? 120 ? 100 ? 80 ? 60 ? 40 ? 20 0.001 0.01 0.1 1 10 t c =25?c base-emitter resistance r be (k ? ) collector-emitter voltage (resistor between b and e) v cer (v) 1 1 000 100 10 0120 20 100 40 80 60 v ce =?2v ambient temperature t a ( c) i ceo (t a ) i ceo (t a = 25 c)
2sb0968 3 sjd00035aed safe operation area ? 0.001 ? 0.1 ? 0.01 ? 0.1 ? 1 ? 10 ? 1 ? 10 ? 100 collector current i c (a) collector-emitter voltage v ce (v) single pulse t c =25?c t=1ms t=1s i cp i c
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